1/4 STPS2H100 ? november 2002 - ed: 1a high voltage power schottky rectifier i f(av) 2a v rrm 100 v t j (max) 175c v f (max) 0.70 v main product characteristics n negligible switching losses n high junction temperature capability n good trade off between leakage cur- rent and forward voltage drop n low leakage current n avalanche rated features and benefits axial power schottky rectifier suited for switch mode power supply and high frequency dc/dc converters. packaged in do-41, this device is intended for use in low voltage, high frequency inverters and small battery chargers. description do-41 symbol parameter value unit v rrm repetitive peak reverse voltage 100 v i f(rms) rms forward current 10 a i f(av) average forward current t l = 120c d = 0.5 2 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 50 a i rrm repetitive peak reverse current t p =2 m s square f = 1khz 1 a t stg storage temperature range - 65 to + 175 c t j maximum operating junction temperature * 175 c dv/dt critical rate of rise of reverse voltage 10000 v/ m s absolute ratings (limiting values, per diode) *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink
STPS2H100 2/4 symbol parameter value unit r th(j-a) junction to ambient lead length = 10 mm 100 c/w r th(j-l) junction to lead lead lenght = 10 mm 35 thermal resistances symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current t j = 25c v r =v rrm 1a t j = 125c 0.2 0.5 ma v f ** forward voltage drop t j =25 ci f = 2 a 0.86 v t j = 125 ci f = 2 a 0.65 0.70 t j = 25c i f = 4 a 0.92 t j = 125 ci f = 4 a 0.72 0.78 pulse test : * t p=5ms, d <2% ** tp = 380 m s, d <2% to evaluate the maximum conduction losses use the following equation : p=0.62xi f(av) +0.04xi f 2 (rms) static electrical characteristics (per diode) p (w) f(av) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 i (a) f(av) t d =tp/t tp d = 0.05 d = 0.1 d = 0.2 d = 1 d = 0.5 fig. 1: conduction losses versus average current. i (a) f(av) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 25 50 75 100 125 150 175 t (c) amb r=r th(j-a) th(j-i) r =100c/w th(j-a) t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d =0.5). i (a) m 0 1 2 3 4 5 6 7 8 9 10 1.e-03 1.e-02 1.e-01 1.e+00 i m t d =0.5 t(s) t =25c a t =75c a t =125c a fig. 3: non repetitive surge peak forward current versus overload duration (maximum values). z/r th(j-a) th(j-a) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t d =tp/t tp t (s) p d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4: relative variation of thermal impedance junction to ambient versus pulse duration.
STPS2H100 3/4 i (a) r 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 0 20406080100 v (v) r t =125c j t =150c j t =100c j t =50c j t =25c j t =75c j fig. 5: reverse leakage current versus reverse voltage applied (typical values). i (a) fm 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v (v) fm t =25c (maximum values) j t =125c (maximum values) j t =125c (typical values) j fig. 7-1: forward voltage drop versus forward current (low level). 0 20 40 60 80 100 120 5 10152025 r (c/w) th l (mm) leads r th(j-a) r th(j-i) fig. 8: thermal resistance versus lead length. c(pf) 10 100 1 10 100 v (v) r f=1mhz v =30mv t =25c osc j fig. 6: junction capacitance versus reverse voltage applied (typical values). i (a) fm 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 v (v) fm t =125c (typical values) j t =125c (maximum values) j t =25c (maximum values) j fig. 7-2: forward voltage drop versus forward current (high level).
STPS2H100 4/4 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com package mechanical data do-41 (plastic) ca b o / o / d o / d c ref. dimensions millimeters inches min. max. min. max. a 4.07 5.20 0.160 0.205 b 2.04 2.71 0.080 0.107 c 28 1.102 d 0.712 0.863 0.028 0.034 ordering type marking package weight base qty delivery mode STPS2H100 STPS2H100 cathode ring do-41 0.34 g 2000 ammopack STPS2H100rl STPS2H100 cathode ring 5000 tape & reel n epoxy meets ul94,v0
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